Stress effect on the tuning properties of Ba0.5Sr0.5TiO3 thin films

被引：7

作者：

Kim, ID ^{[1
]}

Park, JH ^{[1
]}

Kim, HG ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 07期

关键词：

D O I：

10.1149/1.1483157

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ferroelectric thin films are currently being used to develop tunable microwave circuits based on the electric-field dependence of the dielectric constant. Perovskite Ba0.5Sr0.5TiO3 thin films were deposited on Pt/Ti/SiO2/Si and LSCO/Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering. Extensive X-ray diffraction studies exhibit good in-plane relationship of [100]Ba1-xSrxTiO3 (BSTO)//[100//[La0.5Sr0.5CoO3 (LSCO). At the applied voltage of 7 V, the tunability values of barium strontium titanate (BST) films grown on Pt and LSCO/Pt were nearly 2.2:1 and 2.8:1, respectively. The change of dielectric properties in BST/LSCO and BST/Pt is attributed to the change in the film stress and the film orientation. (C) 2002 The Electrochemical Society.

引用

页码：F18 / F21

页数：4

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