Decay dynamics of the positively charged exciton in a single charge tunable self-assembled quantum dot

被引：12

作者：

Dalgarno, P. A. ^{[1
]}

McFarlane, J.

Gerardot, B. D.

Warburton, R. J.

Karrai, K.

Badolato, A.

Petroff, P. M.

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] LMU, Ctr Nanosci, D-80539 Munich, Germany

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.2234745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the decay dynamics of positively charged excitons confined to single InAs quantum dots embedded in an n-type field-effect structure. The positively charged exciton's dynamics are found to be strongly dependent on device dimensions. With a large (small) dot capping layer the decay is dominated by hole tunneling (radiative recombination). The hole tunneling is successfully modeled with a WKB-like zero-dimensional to three-dimensional tunneling approximation. Hole tunneling is not observed in the dynamics of the neutral exciton negatively charged exciton, or biexciton, an effect we attribute to an increase in barrier height through the interdot Coulomb interactions. (c) 2006 American Institute of Physics.

引用

页数：3

共 16 条

[1] Controlled generation of neutral, negatively-charged and positively-charged excitons in the same single quantum dot - art. no. 2119209 [J].

Ediger, M ;

Dalgarno, PA ;

Smith, JM ;

Gerardot, BD ;

Warburton, RJ ;

Karrai, K ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[2] Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots [J].

Fry, PW ;

Finley, JJ ;

Wilson, LR ;

Lemaitre, A ;

Mowbray, DJ ;

Skolnick, MS ;

Hopkinson, M ;

Hill, G ;

Clark, JC .

APPLIED PHYSICS LETTERS, 2000, 77 (26) :4344-4346

[3] Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy [J].

Gong, Q ;

Offermans, P ;

Nötzel, R ;

Koenraad, PM ;

Wolter, JH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5697-5699

[4] In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy [J].

Granados, D ;

García, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2401-2403

[5] Voltage-controlled optics of a quantum dot -: art. no. 217401 [J].

Högele, A ;

Seidl, S ;

Kroner, M ;

Karrai, K ;

Warburton, RJ ;

Gerardot, BD ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 2004, 93 (21)

[6] Optically programmable electron spin memory using semiconductor quantum dots [J].

Kroutvar, M ;

Ducommun, Y ;

Heiss, D ;

Bichler, M ;

Schuh, D ;

Abstreiter, G ;

Finley, JJ .

NATURE, 2004, 432 (7013) :81-84

[7] Time-resolved spectroscopy of multiexcitonic decay in an InAs quantum dot [J].

Santori, C ;

Solomon, GS ;

Pelton, M ;

Yamamoto, Y .

PHYSICAL REVIEW B, 2002, 65 (07) :1-4

[8] Absorption and photoluminescence spectroscopy on a single self-assembled charge-tunable quantum dot -: art. no. 195339 [J].

Seidl, S ;

Kroner, M ;

Dalgarno, PA ;

Högele, A ;

Smith, JM ;

Ediger, M ;

Gerardot, BD ;

Garcia, JM ;

Petroff, PM ;

Karrai, K ;

Warburton, RJ .

PHYSICAL REVIEW B, 2005, 72 (19)

[9] Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot [J].

Smith, JM ;

Dalgarno, PA ;

Warburton, RJ ;

Govorov, AO ;

Karrai, K ;

Gerardot, BD ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 2005, 94 (19)

[10] Carrier storage and capture dynamics in quantum-dot heterostructures [J].

Smith, JM ;

Dalgarno, PA ;

Urbaszek, B ;

McGhee, EJ ;

Buller, GS ;

Nott, GJ ;

Warburton, RJ .

APPLIED PHYSICS LETTERS, 2003, 82 (21) :3761-3763

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