Compact efficient all-solid-state eye-safe laser with self-frequency Raman conversion in a Nd:YVO4 crystal

被引：116

作者：

Chen, YF ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

来源：

OPTICS LETTERS | 2004年 / 29卷 / 18期

关键词：

D O I：

10.1364/OL.29.002172

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An efficient compact eye-safe laser at 1525 nm is presented by use of self-frequency Raman conversion in a diode-pumped actively Q-switched Nd:YVO4 1342-nm laser. At an incident pump power of 13.5 W, the self-stimulated Raman laser produces 1.2 W of 1525-nm average output power at a repetition rate of 20 kHz. The corresponding peak power at 1525 nm is generally greater than 10 kW for repetition rates from 5 to 20 kHz. (C) 2004 Optical Society of America.

引用

页码：2172 / 2174

页数：3

共 11 条

[1] Solid state lasers with Raman frequency conversion [J].

Cerny, P ;

Jelínková, H ;

Zverev, PG ;

Basiev, TT .

PROGRESS IN QUANTUM ELECTRONICS, 2004, 28 (02) :113-143

[2] Diode-pumped, self-stimulating, passively Q-switched Nd3+:PbWO4 Raman laser [J].

Chen, WB ;

Inagawa, Y ;

Omatsu, T ;

Tateda, M ;

Takeuchi, N ;

Usuki, Y .

OPTICS COMMUNICATIONS, 2001, 194 (4-6) :401-407

[3] Pump-to-mode size ratio dependence of thermal loading in diode-end-pumped solid-state lasers [J].

Chen, YF .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2000, 17 (11) :1835-1840

[4] Efficient subnanosecond diode-pumped passively Q-switched Nd:YVO4 self-stimulated Raman laser [J].

Chen, YF .

OPTICS LETTERS, 2004, 29 (11) :1251-1253

[5] Design criteria for concentration optimization in scaling diode end-pumped lasers to sigh powers: Influence of thermal fracture [J].

Chen, YF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (02) :234-239

[6] Self-stimulating, transversally diode pumped Nd3+:KGd(WO4)2 Raman laser [J].

Findeisen, J ;

Eichler, HJ ;

Peuser, P .

OPTICS COMMUNICATIONS, 2000, 181 (1-3) :129-133

[7] All solid-state diode-pumped Raman laser with self-frequency conversion [J].

Grabtchikov, AS ;

Kuzmin, AN ;

Lisinetskii, VA ;

Orlovich, VA ;

Ryabtsev, GI ;

Demidovich, AA .

APPLIED PHYSICS LETTERS, 1999, 75 (24) :3742-3744

[8] Laser operation and Raman self-frequency conversion in Yb:KYW microchip laser [J].

Grabtchikov, AS ;

Kuzmin, AN ;

Lisinetskii, VA ;

Orlovich, VA ;

Demidovich, AA ;

Danailov, MB ;

Eichler, HJ ;

Bednarkiewicz, A ;

Strek, W ;

Titov, AN .

APPLIED PHYSICS B-LASERS AND OPTICS, 2002, 75 (6-7) :795-797

[9] Tetragonal vanadates YVO4 and GdVO4 -: new efficient χ(3)-materials for Raman lasers [J].

Kaminskii, AA ;

Ueda, K ;

Eichler, HJ ;

Kuwano, Y ;

Kouta, H ;

Bagaev, SN ;

Chyba, TH ;

Barnes, JC ;

Gad, GMA ;

Murai, T ;

Lu, JR .

OPTICS COMMUNICATIONS, 2001, 194 (1-3) :201-206

[10] Passive Q switching and self-frequency Raman conversion in a diode-pumped Yb:KGd(WO4)2 laser [J].

Lagatsky, AA ;

Abdolvand, A ;

Kuleshov, NV .

OPTICS LETTERS, 2000, 25 (09) :616-618

← 1 2 →