Optical and EPR centres involving 3d metals in diamond

被引:3
作者
Baker, JM [1 ]
机构
[1] Oxford Phys, Clarendon Lab, Oxford OX1 3PU, England
来源
XI FEOFILOV SYMPOSIUM ON SPECTROSCOPY OF CRYSTALS ACTIVATED BY RARE-EARTH AND TRANSITION METAL IONS | 2002年 / 4766卷
关键词
3d transition ions; diamond; EPR centre; optical zero phonon lines;
D O I
10.1117/12.475322
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Many fewer 3d ions are known to be incorporated at lattice sites (both substitutional and interstitial) in point defects in diamond than in silicon. In diamond, only nickel and cobalt have been positively identified. There appears to be a great variety of nickel-containing sites, and several different cobalt-containing sites, some of these also involving substitutional nitrogen. The evidence for incorporation of other 3d atoms is much less certain, but there is possibly some for Ti, Cr, Mn, Fe, Cu and Zn. Some general inferences may be drawn from these data.
引用
收藏
页码:106 / 118
页数:13
相关论文
共 104 条
[1]  
Abragam A., 1970, ELECT PARAMAGNETIC R
[2]  
AMMERLAAN CAJ, IN PRESS LANDOLTBORN
[3]   The electronic structure of tungsten impurities in diamond films [J].
Anderson, FG ;
Dallas, T ;
Lal, S ;
Gangopadhyay, S ;
Holtz, M .
SOLID STATE COMMUNICATIONS, 1997, 102 (12) :867-870
[4]  
Atkins P. W., 1967, STRUCTURE INORGANIC
[5]  
Bagdasaryan V. S., 1976, Soviet Physics - Solid State, V17
[6]   The role of 14N and 13C hyperfine structure in characterizing point defects in diamond [J].
Baker, JM ;
Hunt, DC ;
Newton, ME ;
Twitchen, D ;
Nadolinny, VA ;
Feigelson, BI .
HYPERFINE INTERACTIONS, 1999, 120 (1-8) :377-381
[7]   Possible evidence of a copper-related electron paramagnetic resonance centre in diamond [J].
Baker, JM .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (10) :2053-2060
[8]   ELECTRONIC AND MAGNETIC-STRUCTURE OF 3D TRANSITION-METAL POINT-DEFECTS IN SILICON CALCULATED FROM 1ST PRINCIPLES [J].
BEELER, F ;
ANDERSEN, OK ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1990, 41 (03) :1603-1624
[9]   THEORETICAL EVIDENCE FOR LOW-SPIN GROUND-STATES OF EARLY INTERSTITIAL AND LATE SUBSTITUTIONAL 3D TRANSITION-METAL IONS IN SILICON [J].
BEELER, F ;
ANDERSEN, OK ;
SCHEFFLER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1498-1501
[10]  
BURNS RC, 1992, PROPERTIES NATURAL S, pCH10