The effect of atomic of hydrogen in the initial procedure of diamond heteroepitaxy on Si and the interface between diamond and Si

被引:1
作者
Kang, J [1 ]
Xiao, CY
Xiong, YY
Feng, KA
Lin, ZD
机构
[1] Beijing Univ, Dept Phys, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China
关键词
D O I
10.7498/aps.48.2104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of atomic hydrogen on C2H2-covered Si surface was studied by high resolution electron loss spectroscope and low energy electron diffraction, the findings was that atomic hydrogen broke up C-C bond in C2H2 and the Si-Si dimer to form C-H, Si-H respectively. According to experimental phenomena, several cluster models were devised for quantum chemistry calculation. The calculation results agreed to experiment well and the discussions on the reaction sites of C2H2 adsorbed on Si(100) surface and the role of atomic hydrogen and nucleation mechanisn of diamond hetereopitaxy on Si were performed.
引用
收藏
页码:2104 / 2109
页数:6
相关论文
共 13 条
[1]   STRUCTURES OF SMALL HYDROCARBONS ADSORBED ON SI(001) AND SI TERMINATED BETA-SIC(001) [J].
CRAIG, BI ;
SMITH, PV .
SURFACE SCIENCE, 1992, 276 (1-3) :174-183
[2]   THE STRUCTURES OF SMALL HYDROCARBONS ADSORBED ON SI(001) AND SI TERMINATED BETA-SIC(001) (VOL 276, PG 174, 1992) [J].
CRAIG, BI ;
SMITH, PV .
SURFACE SCIENCE, 1993, 285 (03) :295-295
[3]   GROUND-STATES OF MOLECULES .38. MNDO METHOD - APPROXIMATIONS AND PARAMETERS [J].
DEWAR, MJS ;
THIEL, W .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (15) :4899-4907
[4]   INTERFACE STUDY OF HETEROEPITAXIAL DIAMOND FILMS ON SILICON(001) SUBSTRATES [J].
FENG, KA ;
YANG, J ;
LIN, ZD .
PHYSICAL REVIEW B, 1995, 51 (04) :2264-2267
[5]   RECOGNITION OF STEREOCHEMICAL PATHS BY ORBITAL INTERACTION [J].
FUKUI, K .
ACCOUNTS OF CHEMICAL RESEARCH, 1971, 4 (02) :57-&
[6]   HETEROEPITAXIAL DIAMOND GROWTH ON (100) SILICON [J].
JIANG, X ;
KLAGES, CP .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :1112-1113
[7]   Role of hydrogen in the initial stage of diamond heteroepitaxy on silicon [J].
Lee, ST ;
Lam, YW ;
Lin, ZD ;
Chen, Y ;
Gao, ZQ .
PHYSICAL REVIEW B, 1996, 54 (19) :14185-14188
[8]   THE ADSORPTION AND THERMAL-DECOMPOSITION OF ACETYLENE ON SI(100) AND VICINAL SI(100)9-DEGREES [J].
NISHIJIMA, M ;
YOSHINOBU, J ;
TSUDA, H ;
ONCHI, M .
SURFACE SCIENCE, 1987, 192 (2-3) :383-397
[9]   TEXTURED GROWTH OF DIAMOND ON SILICON VIA INSITU CARBURIZATION AND BIAS-ENHANCED NUCLEATION [J].
WOLTER, SD ;
STONER, BR ;
GLASS, JT ;
ELLIS, PJ ;
BUHAENKO, DS ;
JENKINS, CE ;
SOUTHWORTH, P .
APPLIED PHYSICS LETTERS, 1993, 62 (11) :1215-1217
[10]   STEREOCHEMISTRY OF ELECTROCYCLIC REACTIONS [J].
WOODWARD, RB ;
HOFFMANN, R .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1965, 87 (02) :395-&