The changing effect of N2/O2 gas flow rate ratios on ultrathin nitrogen-enriched oxynitride gate dielectrics

被引：9

作者：

Chang, KM ^{[1
]}

Yang, WC

Chen, CF

Hung, BF

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30050, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2004年 / 151卷 / 05期

关键词：

D O I：

10.1149/1.1688799

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the growth of an ultrathin 1.0 nm (equivalent oxide thickness = 0.86 nm) oxynitride gate dielectric by rapid thermal processing (RTP) in high-N-2 but low-O-2 gas flow ambient. The effect of the changing N-2/O-2 gas flow ratio on the characteristics of oxynitride films was investigated. High-quality oxynitride film could be formed by RTP in an optimum N-2/O-2 gas flow ratio of 5/1. Detailed characterization (transmission electron microscopy, J-E capacitance-voltage, stress-induced leakage current, charge-trapping properties! demonstrated the high quality of the oxynitride dielectric and showed that low leakage current density J(g) = 0.1 A/cm(2) at 1 V, was 1.85 orders of magnitude lower than that of SiO2. These improvements are attributed to the presence of nitrogen at the interface and in the bulk of the oxynitride. (C) 2004 The Electrochemical Society.

引用

页码：F118 / F122

页数：5

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