Tunneling leakage current in oxynitride: Dependence on oxygen/nitrogen content

It is widely known that the addition of nitrogen in silicon oxide, or the addition of oxygen in silicon nitride, affects its reliability as a gate dielectric. This letter examines the gate leakage current as a function of the oxygen and nitrogen contents in ultrathin silicon oxynitride films on Si substrates. It will be shown that, provided that electron tunneling is the dominant current conduction mechanism, the gate leakage current in the direct tunneling regime increases monotonically with the oxygen content for a given equivalent oxide thickness (EOT), such that pure silicon nitride passes the least amount of current while pure silicon oxide is the leakiest.