BAND DIAGRAM AND CONDUCTIVITY OF SILICON OXYNITRIDE FILMS

[1] PROPERTIES OF SIXOYNZ FILMS ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &

[2] FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 318 - &

[3] Ginovker A S, 1973, MIKROELEKTRONIKA, V2, P283

[4] GREEN M, 1969, SOLID STATE SURFACE, V1

[5] THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 127 (01): : 131 - &

[6] KOLTZOV UI, 1972, ZH PRIKL SPEKTROSK, V16, P474

[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[8] MOTT NF, 1971, ELECTRONIC PROCESSES

[9] INTERFACE BARRIER ENERGY DETERMINATION FROM VOLTAGE DEPENDENCE OF PHOTOINJECTED CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2424 - +

[10] PHOTOINJECTION INTO SIO2 - USE OF OPTICAL INTERFERENCE TO DETERMINE ELECTRON AND HOLE CONTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5093 - &

[1] PROPERTIES OF SIXOYNZ FILMS ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &

[2] FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 318 - &

[3] Ginovker A S, 1973, MIKROELEKTRONIKA, V2, P283

[4] GREEN M, 1969, SOLID STATE SURFACE, V1

[5] THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 127 (01): : 131 - &

[6] KOLTZOV UI, 1972, ZH PRIKL SPEKTROSK, V16, P474

[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[8] MOTT NF, 1971, ELECTRONIC PROCESSES

[9] INTERFACE BARRIER ENERGY DETERMINATION FROM VOLTAGE DEPENDENCE OF PHOTOINJECTED CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2424 - +

[10] PHOTOINJECTION INTO SIO2 - USE OF OPTICAL INTERFERENCE TO DETERMINE ELECTRON AND HOLE CONTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5093 - &