Global versus local ferromagnetism in a model for diluted magnetic semiconductors studied with Monte Carlo techniques

被引:63
作者
Mayr, M [1 ]
Alvarez, G
Dagotto, E
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[3] Florida State Univ, Dept Phys, Tallahassee, FL 32310 USA
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 24期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.65.241202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A model recently introduced for diluted magnetic semiconductors by Berciu and Bhatt [Phys. Rev. Lett. 87, 107203 (2001)] is studied with a Monte Carlo technique, and the results are compared with Hartree-Fock calculations. For doping rates close to the experimentally observed metal-insulator transition, a picture dominated by ferromagnetic droplets formed below a T* scale emerges. The moments of these droplets align as the temperature is lowered below a critical value T-C<T*. Our Monte Carlo investigations provide critical temperatures considerably smaller than Hartree-Fock predictions. Disorder does not seem to enhance ferromagnetism substantially. The inhomogeneous droplet state should be strongly susceptible to changes in doping and external fields.
引用
收藏
页码:2412021 / 2412024
页数:4
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