Doping-induced realignment of molecular levels at organic-organic heterojunctions

被引：76

作者：

Kahn, Antoine

Zhao, Wei

Gao, Weiying

Vazquez, Hector

Flores, Fernando

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] DuPont Co Inc, Expt Stn, Wilmington, DE 19880 USA

[3] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

来源：

CHEMICAL PHYSICS | 2006年 / 325卷 / 01期

基金：

美国国家科学基金会;

关键词：

organic semiconductors; heterojunctions; molecular level alignment; charge neutrality level;

D O I：

10.1016/j.chemphys.2005.09.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This article examines how the concept of alignment of charge neutrality levels (CNL) can be used to explain and predict interface dipole and molecular level offset at organic-organic (OO) heterojunctions. The application of the model of CNL alignment to interfaces between undoped materials is reviewed first. The model is then extended to explain the shift of the CNL upon electrical doping of an organic material, and the resulting change in interface dipole and molecular level alignment. This approach provides, at this point, the first comprehensive prediction of energetics at OO heterojunctions. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：129 / 137

页数：9

共 37 条

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