Moving boundary transport model for acid diffusion in chemically amplified resists

被引:38
作者
Croffie, E [1 ]
Cheng, MS [1 ]
Neureuther, A [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Elect Res Lab, Berkeley, CA 94720 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.591008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a general model for latent image formation in chemically amplified resists. The model is based on a moving boundary acid transport concept that incorporates transient free volume generation and densification. It is based on experimental observation of negligible acid diffusion in polyhydroxysterene below T-g. The model offers insight into the post exposure bake (PEB) reaction mechanism that governs the relief image formation in chemically amplified resists. During FEB, there is a thermally induced deprotection catalyzed by the photogenerated acid that produces volatile by-products thereby generating free volume in the resist polymer. The free volume enhances local diffusivity of the acid. The rapid loss of the volatile products is followed by relaxation of the polymer matrix which eliminates the transient free volume and densifies the polymer. The densified polymer inhibits the diffusion of any acid trapped in the deprotected sites. We present cases where the model reduces to Fickean and case II type reaction driven diffusion models under some simplifying assumptions. The model was implemented in simulation tools for resist models to simulate one-dimensional and two-dimensional profiles. The results imply that the relief image formation depends strongly on both the mechanical the chemical properties of the resist. This model provides new directions for resist process optimization. (C) 1999 American Vacuum Society. [S0734-211X(99)18006-5].
引用
收藏
页码:3339 / 3344
页数:6
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