Determination of transport parameters in fullerene films

被引：44

作者：

Priebe, G

Pietzak, B

Konenkamp, R

机构：

[1] Hahn-Meitner Institut Berlin, 14109 Berlin

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 15期

关键词：

D O I：

10.1063/1.119368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the electron and hole drift mobilities and the recombination lifetime in thin polycrystalline C-60 films. The data are obtained from photocurrent measurements involving an optical interference grating moving at variable velocity across the sample surface. Considerable degradation of the transport parameters is observed as the samples are exposed to air. The initial values for the electron and hole drift mobilities are 1.3+/-0.2 cm(2)/V s and (2+/-1) X 10(-4) cm(2)/V s, respectively, and for the recombination lifetime (1.7+/-0.2) X 10(-6) s. (C) 1997 American Institute of Physics.

引用

页码：2160 / 2162

页数：3

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