A new method for studying semiconducting surfaces in air by scanning tunneling microscopy

被引：2

作者：

Ferlauto, AS

Quivy, AA

机构：

[1] Laboratório de Novos Materiais Semicondutores (LNMS), Instituto de Física, Universidade de São Paulo, 05389-970 São Paulo, SP

来源：

MODERN PHYSICS LETTERS B | 1996年 / 10卷 / 24期

关键词：

D O I：

10.1142/S0217984996001358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used a new method for studying GaAs surfaces in air with a home-made scanning tunneling microscope. The oxide layer was chemically removed, and the sample was prevented from re-oxidation by a thin layer of mineral oil (NOJOL). MBE-grown GaAs layers and InAs quantum dots were successfully imaged.

引用

页码：1189 / 1195

页数：7

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