Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

被引：105

作者：

Yazyev, Oleg V.

Pasquarello, Alfredo

机构：

[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland

[2] PHB Ecublens, Inst Romand Rech Numer Phys Mat, IRRMA, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 03期

关键词：

ELECTRONIC-STRUCTURE; MOLECULAR-DYNAMICS; ROOM-TEMPERATURE; LARGE SPIN; PSEUDOPOTENTIALS; NANOFLAKES; TRANSPORT; SURFACES; CARBON;

D O I：

10.1103/PhysRevB.80.035408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic, and spin transport properties of such junctions based on structurally well-defined interfaces with (111) fcc or (0001) hcp ferromagnetic transition metals. We find low resistance area products, strong exchange couplings across the interface, and magnetoresistance ratios exceeding 100% for certain chemical compositions. These properties can be fine tuned, making the proposed junctions attractive for nanoscale spintronics applications.

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页数：5

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