Optical and photoelectrical properties of oriented ZnO films

被引:33
作者
Tomm, JW
Ullrich, B
Qiu, XG
Segawa, Y
Ohtomo, A
Kawasaki, M
Koinuma, H
机构
[1] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany
[2] Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800868, Japan
[3] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[4] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
D O I
10.1063/1.372101
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO films that have been used as active layers of optically pumped lasers are investigated by a number of optical and photoelectric techniques, such as transmission, reflectivity, photoluminescence and direct and alternating photocurrents. Homogeneity with respect to "bulk" and surface properties is evaluated. The spectral position of the lowest intrinsic exciton peak E-x((A,B)) is determined to be at (3.323 +/- 0.002) eV at 295 K. In spite of the rather small thickness of about 0.5 mu m, the samples do not exhibit strain-induced modifications of the optical properties at the band edge. A deep level is found to be responsible for the room temperature photocurrent, and excitonic features appear as absorption lines. On the other hand, excitonic photocurrent peaks are observed at low temperatures; however, the conduction mechanism still remains defect related. (C) 2000 American Institute of Physics. [S0021-8979(00)06804-3].
引用
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页码:1844 / 1848
页数:5
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