Formation of SiOF films by plasma-enhanced chemical vapor deposition using (C2H5O)(3)SiF

被引：40

作者：

Kitoh, H ^{[1
]}

Muroyama, M ^{[1
]}

Sasaki, M ^{[1
]}

Iwasawa, M ^{[1
]}

Kimura, H ^{[1
]}

机构：

[1] SONY CORP,RES CTR,CTR COMPUTAT SCI,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

plasma-enhanced CVD; TEFS; SiOF interlayer dielectric film; low dielectric constant;

D O I：

10.1143/JJAP.35.1464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new Plasma-Enhanced Chemical Vapor Deposition (PECVD) method using (C2H5O)(3)SiF:tri-ethoxy-fluorosilane as an interlayer dielectric film is proposed based on considerations of gas chemistry. RF power dependence of the film characteristics is investigated, and it is clarified that fluorine stability is improved with increasing RF power. The relative dielectric constant of the films deposited at the power of more than 700 W is about 3.5. Moisture absorption of the film formed from TEFS at 900 W is smaller than that of the SiOF film formed from C2F6 added TEOS.

引用

页码：1464 / 1467

页数：4

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