THERMAL-DESORPTION AND INFRARED STUDIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO FILMS WITH TETRAETHYLORTHOSILICATE

被引:104
作者
HIRASHITA, N
TOKITOH, S
UCHIDA, H
机构
[1] VLSIR and D Center, Oki Electric Industry Co Ltd., Hachioji, Tokyo, 193, Higashi-asakawa
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 04期
关键词
TDS; FT-IR; CVD; OXIDE; TEOS; ADSORBED WATER; CONSTITUTION WATER; MICROSTRUCTURE; PORE; AND DESORPTION STATES;
D O I
10.1143/JJAP.32.1787
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal desorption and Fourier transform infrared spectroscopies were used to study plasma-enhanced chemical vapor deposited SiO films from tetraethylorthosilicate. Significant water desorption and concomitant structural changes were observed for the films during subsequent heat treatments between 100 and 700-degrees-C. The films exhibited three distinct water desorption states. The desorption temperatures were approximately 100-200-degrees-C for the first state, 150-300-degrees-C for the second state, and 350-650-degrees-C for the third state. Air exposure experiments revealed that the first and second states resulted from absorbed water and the third state from constitution water. The first and second desorption states were confirmed to originate from liquid like water and water molecules hydrogen-bonded to Si-OH bonds at macropore sites in the films, respectively. The third desorption state was found to result from Si-OH bonds formed during the film growth. This desorption of constitution water was considered to be accompanied by a microstructural change of the films.
引用
收藏
页码:1787 / 1793
页数:7
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