Critical field of MgB2:: Crossover from clean to dirty regimes -: art. no. 052509

被引：52

作者：

Putti, M

Braccini, V

Ferdeghini, C

Pallecchi, I

Siri, AS

Gatti, F

Manfrinetti, P

Palenzona, A

机构：

[1] Univ Genoa, Dipartimento Fis, INFM, LAMIA, I-16146 Genoa, Italy

[2] Dipartimento Chim & Chim Ind, INFM, LAMIA, I-16146 Genoa, Italy

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.70.052509

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the upper critical field B-c2 in polycrystalline MgB2 samples in which disorder was varied in a controlled way to carry selectively pi and sigma bands from clean to dirty limit. We have found that the clean regime survives when pi bands are dirty and sigma bands are midway between clean and dirty. In this framework we can explain the anomalous behavior of Al doped samples, in which B-c2 decreases as doping increases.

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页码：052509 / 1

页数：4

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