Formation of short pulses with a subnanosecond rise time and a peak power of up to 1 GW by a semiconductor avalanche sharpener

被引：12

作者：

Alichkin, EA ^{[1
]}

Lyubutin, SK ^{[1
]}

Ponomarev, AV ^{[1
]}

Rukin, SN ^{[1
]}

Slovikovskii, BG ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Electrophys, Ural Div, Ekaterinburg 620016, Russia

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2002年 / 45卷 / 04期

关键词：

Peak Power; Rise Time; Operation Mode; Voltage Pulse; Short Pulse;

D O I：

10.1023/A:1019798805905

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of experiments on the formation of high-power pulses with a rise time of <1 ns and a duration of 1-2 ns by a solid-state semiconductor sharpener operating in the mode of delayed impact ionization wave are presented. A peak power of 1 GW in a single-pulse operation mode and 750 MW at a pulse repetition rate of 3.5 kHz was obtained across a 50-Ω load. Experiments on the pulse transformation using a forming line with a variable wave impedance and generation of bipolar voltage pulses are described.

引用

页码：535 / 539

页数：5

共 10 条

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