GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

被引：2

作者：

Allwood, DA ^{[1
]}

Klipstein, PC ^{[1
]}

Mason, NJ ^{[1
]}

Nicholas, RJ ^{[1
]}

Walker, PJ ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

GaAs; optical properties; temperature dependent; surface photoabsorption; p-polarized reflectance; oxide removal; atomic terraces;

D O I：

10.1007/s11664-000-0103-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The real and imaginary components of the GaAs refractive index at temperatures between 20-700 degrees C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temperature-dependent optical constants for GaAs, modeling has allowed the behavior of surface photoabsorption (SPA) signals with temperature and oxide layers present to be predicted for different angles of incidence. The experimentally observed SPA signals during deoxidization of GaAs show strong qualitative agreement with these calculations at each of the angles of incidence considered. The measurement of data and application to modeling provides a platform for the measurement of temperature-dependent optical data for other III-V materials and for the investigation of deoxidation mechanisms.

引用

页码：99 / 105

页数：7

共 33 条

[1] In situ characterisation of MOVPE by surface photoabsorption I. Substrate oxide desorption [J].