Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys

被引：149

作者：

Kalb, J ^{[1
]}

Spaepen, F

Wuttig, M

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1764591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ex situ atomic force microscopy in combination with a high-precision furnace has been employed for a systematic study of crystallization kinetics of sputtered amorphous Ag0.055In0.065Sb0.59Te0.29, Ge4Sb1Te5, and Ge2Sb2Te5 thin films used for optical data storage. Direct observation of crystals enabled us to establish the temperature dependence of the crystal nucleation rate and crystal growth velocity around 150 degreesC. While these alloys exhibited similar crystal growth characteristics, the crystal nucleation behavior of Ag0.055In0.065Sb0.59Te0.29 differed significantly from that of Ge4Sb1Te5 and Ge2Sb2Te5. These observations provide an explanation for the different recrystallization mechanisms observed upon laser heating of amorphous marks. (C) 2004 American Institute of Physics.

引用

页码：5240 / 5242

页数：3

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