Electroluminescent ZnS:Mn films prepared at 220-450 degrees C using complex compounds with sulphur-containing ligands

A method of preparation of manganese-doped ZnS electroluminescent films is proposed using the decomposition in vacuum of volatile complex dithiocarbamate and xanthate compounds. The composition and structure of the films were studied by chemical, electron paramagnetic resonance (EPR) and X-ray phase analyses. It was shown that the crystal structure of the films depends on the class of precursor and the presence of dopant. Using the EPR method, it was found that, at manganese concentrations of about 1% or less, the dopant is incorporated into the ZnS lattice as single non-interacting ions. The electroluminescence maximum was observed at lambda = 580 nm; the luminance was about 1500 cd m(-2) at a voltage of about 190 V and a frequency of 5 kHz.