Homoepitaxial growth of 4H-SiC on porous substrate using bis-trimethylsilmethane precursor

Homoepitaxial 4H-SiC films were grown on 8degrees off-oriented porous substrate using bis-trimethylsilylmethane(BTMSM, C7H20Si2) at a comparatively low temperature. The growth of the films is found to be dominated by diffusion-limited mechanism. Triangular stacking fault (TSF) was incorporated in the film grown at low temperature below 1280degreesC due to the formation of 3C-SiC polytype and high carrier gas flow rate of source material above 30 seem also resulted 3C-SiC phase with double positioning boundary. Very narrow x-ray rocking curves with a full-width-at-half-maximum (FWHM) of 7.4 arcsec were observed for the 4H epilayer grown at 1440degreesC with the BTMSM flow rate of 10sccm.