Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor

被引:12
作者
Jeong, JK
Na, HJ
Choi, J
Hwang, CS
Kim, HJ
Bahng, W
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Kwanak Ku, Seoul 151742, South Korea
[2] Electrotech Lab, Div Mat Sci, Tsukuba, Ibaraki 305, Japan
关键词
6H-SiC; homoepitaxy; MOCVD; step-controlled epitaxy;
D O I
10.1016/S0022-0248(99)00744-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Homoepitaxial silicon carbide (SiC) films were grown on 3.5 degrees off-oriented (0 0 0 1) 6H-SiC by metal-organic chemical vapor deposition (MOCVD) using bis-trimethylsilylmethane (BTMSM, C7H20Si2). A pronounced effect of the growth conditions such as source flow rate and growth temperature on the polytype formation and structural imperfection of the epilayer was observed. The growth behavior was explained by a step controlled epitaxy model. It was demonstrated by high-resolution X-ray diffractometry and transmission electron microscopy that high-quality 6H-SiC thin films were successfully grown at the optimized growth condition of substrate temperature 1440 degrees C with the carrier gas flow rate of 10 sccm. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:629 / 636
页数:8
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