Heteroepitaxial growth of beta-SiC thin films on Si(100) substrate using bis-trimethylsilylmethane

A non-toxic and non-flammable organosilicon source having alternate Si-C bonding structure, bis-trimethylsilylmethane [C7H20Si2], was first used to deposit epitaxial beta-SiC films at low growth temperature by chemical vapor deposition. Epitaxial beta-SiC films were successfully grown on carburized Si(100) substrates at temperatures as low as 1100 degrees C, although the carburized buffer layer was a well-oriented, (100) polycrystalline film. Transmission electron microscopy analysis revealed that the films contain twins, stacking faults, and antiphase boundaries. Without the carburized buffer layer, highly (111) preferred oriented beta-SiC films were grown by increasing the growth temperature. (C) 1996 American Institute of Physics.