Fabrication of metal nanocrystalline films by gas-deposition method

被引:9
作者
Sasaki, Y
Shiozawa, K
Tanimoto, H
Iwamoto, Y
Kita, E
Tasaki, A
机构
[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN
[2] DAI NIPPON PRINTING CO LTD,KASHIWA,CHIBA 277,JAPAN
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1996年 / 217卷
关键词
gas deposition; fabrication;
D O I
10.1016/S0921-5093(96)10325-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ni nanocrystalline films were prepared by using a gas-deposition method under various conditions. From the results of a scanning electron microscopy and an atomic force microscopy study, small particles (similar to 10 nm in diameter) were observed as well as their aggregates. The less aggregation and the lower coercivity are realized with the lower evaporation temperature and the higher pressure in tile evaporation chamber. The evaporation rates are clearly dependent on the evaporation temperature, however, the particle sizes are almost independent of it.
引用
收藏
页码:344 / 347
页数:4
相关论文
共 8 条
[1]  
Birringer R., 1986, T JAPAN I METALS S, V27, P43
[2]  
FUCHITA E, 1994, P 8 INT MICR C IMC 9, P46
[3]   ON THE STRUCTURE OF GRAIN-BOUNDARIES IN METALS [J].
GLEITER, H .
MATERIALS SCIENCE AND ENGINEERING, 1982, 52 (02) :91-131
[4]   DEPOSITION OF ULTRA FINE PARTICLES USING A GAS-JET [J].
KASHU, S ;
FUCHITA, E ;
MANABE, T ;
HAYASHI, C .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12) :L910-L912
[5]  
Kimoto K., 1963, JPN J APPL PHYS, V2, P702, DOI 10.1143/JJAP.2.702
[6]  
TANIMOTO H, 1996, MATER SCI ENG, V217, P24
[7]  
TSUGE S, 1988, CHOBIRYUSHI, P133
[8]   STUDIES OF ULTRAFINE PARTICLES IN JAPAN - CRYSTALLOGRAPHY - METHODS OF PREPARATION AND TECHNOLOGICAL APPLICATIONS [J].
UYEDA, R .
PROGRESS IN MATERIALS SCIENCE, 1991, 35 (01) :1-96