Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs

被引：20

作者：

Betko, J ^{[1
]}

Morvic, M ^{[1
]}

Novak, J ^{[1
]}

Forster, A ^{[1
]}

Kordos, P ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, RES CTR JULICH, INST THIN FILM & ION TECHNOL, D-52425 JULICH, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependent conductivity and Hall effect measurements were carried out on molecular-beam epitaxial GaAs layers grown at 200-420 degrees C and separated from the substrate. An analysis of experimental data with and without considering the hopping Hall mobility was made. An extremely low room temperature Hall mobility of 0.14 cm(2) V-1 s(-1) was measured in the 250 degrees C layer, which could be interpreted as the hopping Hall mobility. The room temperature band Hall mobility (mu(Hb)) increases from 500 to 6000 cm(2) V-1 s(-1) and the power (n) of the temperature dependence of mu(Hb) (similar to T--n) increases from 0.5 to 1.2 with increasing growth temperature from 300 to 420 degrees C. (C) 1996 American Institute of Physics.

引用

页码：2563 / 2565

页数：3

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