ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 300-450-DEGREES-C

被引：19

作者：

LOOK, DC ^{[1
]}

ROBINSON, GD ^{[1
]}

SIZELOVE, JR ^{[1
]}

STUTZ, CE ^{[1
]}

机构：

[1] SOLID STATE ELECTR DIRECTORATE,WRIGHT LAB,ELR,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期

关键词：

DEFECTS; GAAS; LOW-TEMPERATURE-GROWN; MBE;

D O I：

10.1007/BF02649991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs grown at the low substrate temperatures of 300-450 degrees C. Layers grown from 350-450 degrees C are semi-insulating (resistivity greater than 10(7) Omega-cm), as grown, because of an As-Ga-related donor (not EL2) at E(c)-0.65 eV. The donor concentrations are about 2 x 10(18) cm(-3) and 2 x 10(17) cm(-3) at growth temperatures of 300 and 400 degrees C, respectively, and acceptor concentrations are about an order of magnitude lower. Relatively high mobilities (similar to 5000 cm(2)/V s) along with the high resistivities make this material potentially useful for certain device applications.

引用

页码：1425 / 1428

页数：4

共 8 条

[1] PHOTOQUENCHING OF HOPPING CONDUCTION IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM-EPITAXIAL GAAS [J].

FANG, ZQ ;

LOOK, DC .

APPLIED PHYSICS LETTERS, 1992, 61 (12) :1438-1440

[2] INTEGRATION OF LOW-TEMPERATURE GAAS ON SI SUBSTRATES [J].

FRANKEL, MY ;

TADAYON, B ;

CARRUTHERS, TF .

APPLIED PHYSICS LETTERS, 1993, 62 (03) :255-257

[3] NEW ASGA RELATED CENTER IN GAAS [J].

LOOK, DC ;

FANG, ZQ ;

SIZELOVE, JR ;

STUTZ, CE .

PHYSICAL REVIEW LETTERS, 1993, 70 (04) :465-468

[4] ANOMALOUS HALL-EFFECT RESULTS IN LOW-TEMPERATURE MOLECULAR-BEAM-EPITAXIAL GAAS - HOPPING IN A DENSE EL2-LIKE BAND [J].

LOOK, DC ;

WALTERS, DC ;

MANASREH, MO ;

SIZELOVE, JR ;

STUTZ, CE ;

EVANS, KR .

PHYSICAL REVIEW B, 1990, 42 (06) :3578-3581

[5] ANNEALING DYNAMICS OF MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 200-DEGREES-C [J].

LOOK, DC ;

WALTERS, DC ;

ROBINSON, GD ;

SIZELOVE, JR ;

MIER, MG ;

STUTZ, CE .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :306-310

[6] GROWTH TEMPERATURE-DEPENDENCE IN MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE [J].

MUROTANI, T ;

SHIMANOE, T ;

MITSUI, S .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :302-308

[7] NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS [J].

SMITH, FW ;

CALAWA, AR ;

CHEN, CL ;

MANFRA, MJ ;

MAHONEY, LJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :77-80

[8] ARSENIC PRECIPITATES AND THE SEMI-INSULATING PROPERTIES OF GAAS BUFFER LAYERS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

WARREN, AC ;

WOODALL, JM ;

FREEOUF, JL ;

GRISCHKOWSKY, D ;

MCINTURFF, DT ;

MELLOCH, MR ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1990, 57 (13) :1331-1333

← 1 →