NEW ASGA RELATED CENTER IN GAAS

被引：50

作者：

LOOK, DC ^{[1
]}

FANG, ZQ ^{[1
]}

SIZELOVE, JR ^{[1
]}

STUTZ, CE ^{[1
]}

机构：

[1] USAF,SOLID STATE ELECTR DIRECTORATE,WRIGHT LAB,WL,ELRA,DAYTON,OH 45433

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.70.465

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new center related to As(Ga) has been found at relatively high concentrations (10(17) cm-3) in semi-insulating (2 x 10(7) OMEGA cm) molecular beam epitaxial GaAs grown at 400-degrees-C. Although the ir photo-quenching and thermal recovery characteristics are nearly identical to those of EL2, the thermal activation energy is only 0.65 +/- 0.01 eV, much lower than the EL2 value of 0.75 +/- 0.01 eV. Other properties which are different include the electron-capture barrier energy, hyperfine constant, and magnetic circular dichroism spectrum.

引用

页码：465 / 468

页数：4

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