MECHANISMS FOR GAAS SURFACE PASSIVATION BY A MOLECULAR-BEAM EPITAXIAL CAP LAYER GROWN AT 200-DEGREES-C

被引：9

作者：

LOOK, DC ^{[1
]}

WALTERS, DC ^{[1
]}

STUTZ, CE ^{[1
]}

EVANS, KR ^{[1
]}

SIZELOVE, JR ^{[1
]}

机构：

[1] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.350450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n-type conductive layer significantly reduces the free-electron depletion from the latter. By analyzing electron transfer to surface, interface, and bulk acceptor states in the cap, as a function of cap thickness, we show that either (1) the usual E(C)- 0.7 eV surface states are absent, (2) a dense donor near E(C)- 0.4 eV exists or (3) a high donor interface charge (approximately 5X10(12) cm-2) is present. Any of these conclusions constitutes an important new aspect of low-temperature MBE GaAs.

引用

页码：5981 / 5984

页数：4

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