COMPARISON OF SURFACE-PROPERTIES OF SODIUM SULFIDE AND AMMONIUM SULFIDE PASSIVATION OF GAAS

被引：71

作者：

BESSER, RS ^{[1
]}

HELMS, CR ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.343316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4306 / 4310

页数：5

共 18 条

[1] EFFECT OF SODIUM SULFIDE TREATMENT ON BAND BENDING IN GAAS
BESSER, RS
HELMS, CR
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1707 - 1709
[2] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES
CARPENTER, MS
MELLOCH, MR
LUNDSTROM, MS
TOBIN, SP
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (25) : 2157 - 2159
[3] SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS
CARPENTER, MS
MELLOCH, MR
DUNGAN, TE
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 66 - 68
[4] DOBKIN DM, UNPUB
[5] RAMAN-SCATTERING MEASUREMENTS OF DECREASED BARRIER HEIGHTS IN GAAS FOLLOWING SURFACE CHEMICAL PASSIVATION
FARROW, LA
SANDROFF, CJ
TAMARGO, MC
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1931 - 1933
[6] CONTROL OF FERMI LEVEL PINNING AND RECOMBINATION PROCESSES AT GAAS-SURFACES BY CHEMICAL AND PHOTOCHEMICAL TREATMENTS
HASEGAWA, H
ISHII, H
SAWADA, T
SAITOH, T
KONISHI, S
LIU, YA
OHNO, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1184 - 1192
[7] SULFUR AS A SURFACE PASSIVATION FOR INP
IYER, R
CHANG, RR
LILE, DL
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 134 - 136
[8] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF GAAS SURFACE-STATES TREATED WITH INORGANIC SULFIDES
LIU, D
ZHANG, T
LARUE, RA
HARRIS, JS
SIGMON, TW
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1059 - 1061
[9] Liu D., COMMUNICATION
[10] NEAR-IDEAL TRANSPORT IN AN ALGAAS GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY NA2S.9H2O REGROWTH
NOTTENBURG, RN
SANDROFF, CJ
HUMPHREY, DA
HOLLENBECK, TH
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 218 - 220

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