DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF GAAS SURFACE-STATES TREATED WITH INORGANIC SULFIDES

被引：51

作者：

LIU, D ^{[1
]}

ZHANG, T ^{[1
]}

LARUE, RA ^{[1
]}

HARRIS, JS ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1059 / 1061

页数：3

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