UNPINNING OF GAAS SURFACE FERMI LEVEL BY 200-DEGREES-C MOLECULAR-BEAM EPITAXIAL LAYER

被引：15

作者：

LOOK, DC ^{[1
]}

STUTZ, CE ^{[1
]}

EVANS, KR ^{[1
]}

机构：

[1] WRDC,ELRA,ELECTR TECHNOL LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 24期

关键词：

D O I：

10.1063/1.104110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Previous attempts to passivate the n-type (100)GaAs surface have significantly reduced only the surface recombination centers, but not the surface acceptors which pin the Fermi level. Here we show that a 100 Å molecular beam epitaxial layer grown at 200°C reduces the effective surface potential energy - eφs from 0.70 to 0.17 eV, nearly eliminates light sensitivity, and permits nonalloyed ohmic contacts. After a 10 min, 450°C anneal, - eφs increases only to 0.22 eV.

引用

页码：2570 / 2572

页数：3

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