PARASITIC EFFECTS OF SURFACE-STATES ON GAAS-MESFET CHARACTERISTICS AT LIQUID-NITROGEN TEMPERATURE

被引：6

作者：

LIANG, CL ^{[1
]}

WONG, H ^{[1
]}

CHEUNG, NW ^{[1
]}

SATO, RN ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,EL SEGUNDO,CA 90245

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1858 / 1860

页数：3

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