GALLIUM-ARSENIDE E-MESFET AND D-MESFET DEVICE NOISE CHARACTERISTICS OPERATED AT CRYOGENIC TEMPERATURES WITH ULTRALOW DRAIN CURRENT

被引：2

作者：

SATO, RN

SOKOLICH, M

DOUDOUMOPOULOS, N

DUFFEY, JR

机构：

[1] Hughes Aircraft Co, El Segundo, CA,, USA, Hughes Aircraft Co, El Segundo, CA, USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

Manuscript received January 5; 1988; revised March 1; 1988. This work was supported in part by the Defense Advanced Research Projects Agency (DARPA); Strategic Technology Office (STO); Arpa Order RAD94-86; issued by U.S. Army Missile Command under Contract DAAH01-86-C-0820. The authors are with Hughes Aircraft Company; El Segundo; CA 90245. IEEE Log Number 8821060;

D O I：

10.1109/55.702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：238 / 240

页数：3

共 9 条

[1] SUPRESSION OF DRAIN CONDUCTANCE TRANSIENTS, DRAIN CURRENT OSCILLATIONS, AND LOW-FREQUENCY GENERATION RECOMBINATION NOISE IN GAAS-FETS USING BURIED CHANNELS [J].