TEMPERATURE-DEPENDENCE OF BACKGATING EFFECT IN GAAS INTEGRATED-CIRCUITS

被引：17

作者：

LEE, CP

CHANG, MF

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：428 / 430

页数：3

共 8 条

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[3] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION [J].

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[4]

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[5]

LEE CP, 1982, IEEE ELECTRON DEVICE, V3, P97

[6]

LEE CP, 1982, P GAAS IC S, P169

[7] MODELING OF BACKGATING EFFECTS ON GAAS DIGITAL INTEGRATED-CIRCUITS [J].

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (02) :245-250

[8] LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J].

WELCH, BM ;

SHEN, Y ;

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