MODELING OF BACKGATING EFFECTS ON GAAS DIGITAL INTEGRATED-CIRCUITS

被引：8

作者：

LEE, SJ ^{[1
]}

LEE, CP ^{[1
]}

SHEN, E ^{[1
]}

KAELIN, GR ^{[1
]}

机构：

[1] UNIV SO CALIF,SEMICOND DEVICE PHYS LAB,LOS ANGELES,CA 90089

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1984年 / 19卷 / 02期

关键词：

D O I：

10.1109/JSSC.1984.1052124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：245 / 250

页数：6

共 9 条

[1] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :419-426

[2] BACKGATING AND LIGHT SENSITIVITY IN ION-IMPLANTED GAAS INTEGRATED-CIRCUITS [J].

GORONKIN, H ;

BIRRITTELLA, MS ;

SEELBACH, WC ;

VAITKUS, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) :845-850

[3] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

YU, PW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :949-955

[4]

KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059

[5]

LEE CP, 1982, IEEE ELECTRON DEVICE, V3, P97

[6]

LEE CP, 1982, P GAAS IC S, P169

[7] ANALYSIS OF GAAS-FETS FOR INTEGRATED-LOGIC [J].

LEHOVEC, K ;

ZULEEG, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1074-1091

[8] DEVICE MODEL FOR AN ION-IMPLANTED MESFET [J].

TAYLOR, GW ;

DARLEY, HM ;

FRYE, RC ;

CHATTERJEE, PK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) :172-182

[9] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J].

VANTUYL, RL ;

LIECHTI, CA ;

LEE, RE ;

GOWEN, E .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) :485-496

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