SUPRESSION OF DRAIN CONDUCTANCE TRANSIENTS, DRAIN CURRENT OSCILLATIONS, AND LOW-FREQUENCY GENERATION RECOMBINATION NOISE IN GAAS-FETS USING BURIED CHANNELS

被引：21

作者：

CANFIELD, PC

FORBES, L

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1109/T-ED.1986.22596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：925 / 928

页数：4

共 27 条

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[4] GATE-BIAS-DEPENDENT LOW-FREQUENCY OSCILLATIONS IN GAAS MISFETS [J].

CANFIELD, PC ;

FORBES, L .

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ELECTRONICS LETTERS, 1982, 18 (05) :207-208

[6] SEPARATION OF GENERATION-RECOMBINATION AND 1/F NOISE COMPONENTS IN GAAS-FETS [J].

FORBES, L ;

CANFIELD, PC ;

GLEASON, R ;

MCCAMANT, A .

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[7]

FORBES L, 1984 DEV RES C

[8]

FORBES L, 1984, 3RD P SEM 3 5 MAT C, P392

[9]

Goronkin H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P182

[10] TEMPERATURE-DEPENDENCE OF FET PROPERTIES FOR CR-DOPED AND LEC SEMI-INSULATING GAAS SUBSTRATES [J].

HICKMOTT, TW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :54-62

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