TEMPERATURE-DEPENDENCE OF FET PROPERTIES FOR CR-DOPED AND LEC SEMI-INSULATING GAAS SUBSTRATES

被引：11

作者：

HICKMOTT, TW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 01期

关键词：

D O I：

10.1109/T-ED.1984.21473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：54 / 62

页数：9

共 36 条

[1] NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

ASHBY, A ;

ROBERTS, GG ;

ASHEN, DJ ;

MULLIN, JB .

SOLID STATE COMMUNICATIONS, 1976, 20 (01) :61-63

[2] MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299-K AND 105-K [J].

DAS, MB ;

KIM, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :205-211

[3] THE INFLUENCE OF CR ON THE MOBILITY OF ELECTRONS IN GAAS-FETS [J].

DEBNEY, BT ;

JAY, PR .

SOLID-STATE ELECTRONICS, 1980, 23 (07) :773-781

[4]

DILORENZO JV, 1982, GAAS FET PRINCIPLES

[5] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS [J].

FAVENNEC, PN ;

HARIDON, HL .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :699-701

[6]

FORD W, 1982, NOV GAAS IC S, P62

[7] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J].

HOUNG, YM ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3348-3352

[8]

HOWER PL, 1969, I PHYS C SER, V7, P187

[9] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J].

ITOH, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1037-1045

[10]

ITOH T, 1979, I PHYS C SER, V45, P326

← 1 2 3 4 →