THE INFLUENCE OF CR ON THE MOBILITY OF ELECTRONS IN GAAS-FETS

被引:17
作者
DEBNEY, BT
JAY, PR
机构
关键词
D O I
10.1016/0038-1101(80)90136-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:773 / 781
页数:9
相关论文
共 29 条
[1]   ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].
BROZEL, MR ;
BUTLER, J ;
NEWMAN, RC ;
RITSON, A ;
STIRLAND, DJ ;
WHITEHEAD, C .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09) :1857-1863
[2]  
BURHOP EHS, 1961, QUANTUM THEORY, V1
[3]  
BUTLIN RS, 1977, I PHYSICS C SERIES A, V33, P237
[4]  
CROSSLEY I, 1977, I PHYS C SER B, V33, P289
[5]   ELECTRON SCATTERING IN INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149
[6]   TRANSPORT OF ELECTRONS IN INTRINSIC INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) :129-148
[7]   ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS [J].
FORTINI, A ;
DIGUET, D ;
LUGAND, J .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3121-&
[8]  
GRIGOREV NN, 1968, FIZ TVERD TELA+, V10, P837
[9]  
HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[10]   DEEP CENTER PHOTO-LUMINESCENCE SPECTRA OF GAAS(CR,SI) [J].
INSTONE, T ;
EAVES, L .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (18) :L771-L775