TEMPERATURE-DEPENDENCE OF FET PROPERTIES FOR CR-DOPED AND LEC SEMI-INSULATING GAAS SUBSTRATES

被引：11

作者：

HICKMOTT, TW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 01期

关键词：

D O I：

10.1109/T-ED.1984.21473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：54 / 62

页数：9

共 36 条

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[20]

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