SI-28 IMPLANTATION INTO AR-40 IMPLANT-PRETREATED SEMI-INSULATING GAAS SUBSTRATES - MOBILITY AND ACTIVATION EFFICIENCY ENHANCEMENT

被引:9
作者
LIU, SG
NARAYAN, SY
MAGEE, CW
WU, CP
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D O I
10.1063/1.93293
中图分类号
O59 [应用物理学];
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页码:72 / 75
页数:4
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共 6 条
[1]   STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].
CHRISTEL, LA ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055
[2]   LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES [J].
DONNELLY, JP ;
BOZLER, CO ;
LINDLEY, WT .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :273-276
[3]  
HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[4]  
LIU SG, 1980, RCA REV, V41, P227
[5]   STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING [J].
MAGEE, TJ ;
KAWAYOSHI, H ;
ORMOND, RD ;
CHRISTEL, LA ;
GIBBONS, JF ;
HOPKINS, CG ;
EVANS, CA ;
DAY, DS .
APPLIED PHYSICS LETTERS, 1981, 39 (11) :906-908
[6]  
van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1