STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING

被引：30

作者：

MAGEE, TJ

KAWAYOSHI, H

ORMOND, RD

CHRISTEL, LA

GIBBONS, JF

HOPKINS, CG

EVANS, CA

DAY, DS

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

[3] AVANTEK INC,SANTA CLARA,CA 95051

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 11期

关键词：

D O I：

10.1063/1.92602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：906 / 908

页数：3

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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 635 - 637
[6] ANNEALING OF DAMAGE AND REDISTRIBUTION OF CR IN BORON-IMPLANTED SI3N4-CAPPED GAAS
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