FRONT SURFACE CONTROL OF CR REDISTRIBUTION AND FORMATION OF STABLE CR DEPLETION CHANNELS IN GAAS

被引：10

作者：

MAGEE, TJ

ORMOND, RD

EVANS, CA

BLATTNER, RJ

MALBON, RM

DAY, DS

SANKARAN, R

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

[2] AVANTEK INC,SANTA CLARA,CA 95051

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.92412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：559 / 561

页数：3

共 15 条

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[3]

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[6] INCORPORATION OF BORON DURING THE GROWTH OF GAAS SINGLE-CRYSTALS [J].

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MAGEE, TJ .

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[8] REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L151-L154

[9] ALLOYING OF AU LAYERS AND REDISTRIBUTION OF CR IN GAAS [J].

MAGEE, TJ ;

PENG, J ;

HONG, JD ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :615-617

[10] LOW-TEMPERATURE GETTERING OF CR IN GAAS [J].

MAGEE, TJ ;

HUNG, J ;

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EVANS, CA .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :53-55

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