ALLOYING OF AU LAYERS AND REDISTRIBUTION OF CR IN GAAS

被引：11

作者：

MAGEE, TJ ^{[1
]}

PENG, J ^{[1
]}

HONG, JD ^{[1
]}

DELINE, VR ^{[1
]}

EVANS, CA ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Alloying of Au films on Cr-doped GaAs substrates and Sn-doped LPE layers grown on semi-insulating substrates has been investigated by TEM and SIMS profiling. Annealing at 350°C for variable periods was found to produce rapid outdiffusion of Cr into regions of near-surface damage induced by strain effects at the interface and subsequent diffusion of Au into the GaAs.

引用

页码：615 / 617

页数：3

共 19 条

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