LOW-TEMPERATURE REDISTRIBUTION OF CR IN BORON-IMPLANTED GAAS IN THE ABSENCE OF ENCAPSULANT STRESS

被引：14

作者：

MAGEE, TJ ^{[1
]}

LEE, KS ^{[1
]}

ORMOND, R ^{[1
]}

EVANS, CA ^{[1
]}

BLATTNER, RJ ^{[1
]}

HOPKINS, C ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期

关键词：

D O I：

10.1063/1.92003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：635 / 637

页数：3

共 10 条

[1] Asbeck P. M., 1980, IEEE Electron Device Letters, VEDL-1, P35, DOI 10.1109/EDL.1980.25221
[2] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM
BAYLISS, CR
KIRK, DL
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) : 233 - &
[3] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293
[4] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS
FAVENNEC, PN
HARIDON, HL
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 699 - 701
[5] INCORPORATION OF BORON DURING THE GROWTH OF GAAS SINGLE-CRYSTALS
HOPKINS, CG
DELINE, VR
BLATTNER, RJ
EVANS, CA
MAGEE, TJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 989 - 990
[6] HUBER AM, 1979, APPL PHYS LETT, V34, P859
[7] ALLOYING OF AU LAYERS AND REDISTRIBUTION OF CR IN GAAS
MAGEE, TJ
PENG, J
HONG, JD
DELINE, VR
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 615 - 617
[8] LOW-TEMPERATURE GETTERING OF CR IN GAAS
MAGEE, TJ
HUNG, J
DELINE, VR
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 53 - 55
[9] BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS
MAGEE, TJ
PENG, J
HONG, JD
EVANS, CA
DELINE, VR
MALBON, RM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 277 - 279
[10] GETTERING OF CR IN GAAS BY BACK SURFACE MECHANICAL DAMAGE
MAGEE, TJ
PENG, J
HONG, JD
EVANS, CA
DELINE, VR
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01): : 169 - 172

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