GETTERING OF CR IN GAAS BY BACK SURFACE MECHANICAL DAMAGE

被引：7

作者：

MAGEE, TJ

PENG, J

HONG, JD

EVANS, CA

DELINE, VR

机构：

[1] Advanced Research and Applications Corporation, Sunnyvale

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 55卷 / 01期

关键词：

D O I：

10.1002/pssa.2210550118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dislocation line structure introduced by mechanical damage at the back surface is shown to be effective in gettering background concentrations of Cr in doped GaAs wafers. Reverse annealing or “degettering” is shown to occur after extended annealing at 800 °C. In each case, the gettering behaviour can be correlated with the annealing of dislocation lines at the back surface. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：169 / 172

页数：4

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