DEFECT FORMATION CHEMISTRY OF EL2 CENTER AT EC-0.83 EV IN ION-IMPLANTED GALLIUM-ARSENIDE

被引：15

作者：

LI, GP

WANG, KL

机构：

[1] Device Research Laboratory, University of California, Los Angeles, CA 90024, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

收藏

页码：8653 / 8662

页数：10

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共 44 条

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