NEW MODELING OF GAAS-MESFETS

[1] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 573 - +

[2] HARIU T, 1982, JAPAN J APPL PHYS, V21, P77

[3] ESTIMATION OF GAAS STATIC RAM PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (07) : 1130 - 1135

[4] ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D-TYPE GAAS DCFL CIRCUITS [J]. ELECTRONICS LETTERS, 1981, 17 (15) : 522 - 523

[5] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[7] UNIFIED DEFECT MODEL AND BEYOND [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027

[8] TOYODA N, 1981, IECE ED80126 TECH GR

[9] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1772 - 1777

[1] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 573 - +

[2] HARIU T, 1982, JAPAN J APPL PHYS, V21, P77

[3] ESTIMATION OF GAAS STATIC RAM PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (07) : 1130 - 1135

[4] ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D-TYPE GAAS DCFL CIRCUITS [J]. ELECTRONICS LETTERS, 1981, 17 (15) : 522 - 523

[5] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[7] UNIFIED DEFECT MODEL AND BEYOND [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027

[8] TOYODA N, 1981, IECE ED80126 TECH GR

[9] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1772 - 1777