THERMAL RECOVERY OF PHOTOQUENCHED EL2 INFRARED-ABSORPTION IN GAAS

[1] PHOTORESPONSE OF THE EL2 ABSORPTION IN UNDOPED SEMIINSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1282 - 1284

[2] PHOTON-INDUCED RECOVERY OF PHOTOQUENCHED EL2 INTRACENTER ABSORPTION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (24) : 1751 - 1753

[3] Gatos H. C., 1985, MATER RES SOC S P, V46, P153

[4] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[5] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[6] LAYRAL P, 1982, SOLID STATE COMMUN, V42, P67

[7] MAKRAMEBEID S, 1985, SEMIINSULATING 3 5 M, P184

[8] FOURIER-TRANSFORM INFRARED-ABSORPTION STUDIES OF INTRACENTER TRANSITIONS IN THE EL2 LEVEL IN SEMIINSULATING BULK GAAS GROWN WITH THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J]. PHYSICAL REVIEW B, 1987, 35 (05): : 2524 - 2527

[9] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748

[10] MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[1] PHOTORESPONSE OF THE EL2 ABSORPTION IN UNDOPED SEMIINSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1282 - 1284

[2] PHOTON-INDUCED RECOVERY OF PHOTOQUENCHED EL2 INTRACENTER ABSORPTION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (24) : 1751 - 1753

[3] Gatos H. C., 1985, MATER RES SOC S P, V46, P153

[4] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[5] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[6] LAYRAL P, 1982, SOLID STATE COMMUN, V42, P67

[7] MAKRAMEBEID S, 1985, SEMIINSULATING 3 5 M, P184

[8] FOURIER-TRANSFORM INFRARED-ABSORPTION STUDIES OF INTRACENTER TRANSITIONS IN THE EL2 LEVEL IN SEMIINSULATING BULK GAAS GROWN WITH THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J]. PHYSICAL REVIEW B, 1987, 35 (05): : 2524 - 2527

[9] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748

[10] MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399